탄화규소의 특성 요약

탄화규소는 Si 및 C 이원계에서 유일한 이원 화합물입니다. 원자비는 1:1입니다. 다음은 주로 탄화규소의 특성을 설명합니다.

  1. has good stability.

  Boiling in HCl, H2SO4 and HF is also not attacked. SiC does not react with silicic acid at high temperature, so it has good resistance to acid slag. SiC and lime start to react at 525 degrees, and the reaction is remarkable at around 1000 degrees, and the reaction with copper oxide has been strongly carried out at 800 degrees. . It reacts with iron oxide at 1000-1200 degrees, and it has obvious cracking reaction at 1300 degrees. The reaction with manganese oxide starts from 1360 degrees to the cracking reaction. In chlorine, SiC starts to react with it from 600 degrees, and it can be decomposed into SiCl4 and CCl4 at 1200 degrees. Molten alkali can decompose SiC when heated.

  2. Good anti-oxidation

  Silicon carbide has good oxidation resistance at room temperature, and the residual Si, C and iron oxide during the synthesis of SiC have an influence on the degree of oxidation of SiC. Pure SiC can be safely used at temperatures up to 1500 degrees in a common oxidizing atmosphere, while silicon carbide containing some impurities will oxidize at 1220 degrees.

  3. Good thermal shock resistance.

  Because silicon carbide does not melt and decomposes to a high temperature of vapor, and has high thermal conductivity and low thermal expansion, it has good thermal shock resistance.